CVE-2021-42114 : Exploit Details and Defense Strategies
Discover how CVE-2021-42114 affects modern DDR4 and LPDDR4X DRAM devices. Learn about the vulnerability, its impact on system security, and mitigation steps to protect your systems.
Modern DRAM devices are vulnerable to a Rowhammer attack bypassing Target Row Refresh (TRR) mitigations on DDR4 and LPDDR4X memory modules.
Understanding CVE-2021-42114
What is CVE-2021-42114?
Modern DRAM devices are susceptible to a vulnerability that allows attackers to trigger bit flips by exploiting non-uniform Rowhammer access patterns, affecting major manufacturers like Samsung, SK Hynix, and Micron.
The Impact of CVE-2021-42114
The vulnerability enables privilege escalation attacks, potentially compromising system integrity and confidentiality, and allowing unauthorized access to sensitive information.
Technical Details of CVE-2021-42114
Vulnerability Description
The TRR bypass vulnerability allows attackers to trigger bit flips in DRAM chips, compromising system security.
Affected Systems and Versions
- Micron ddr4_sdram, Samsung ddr4_sdram, SK Hynix ddr4_sdram, Micron lpddr4, Samsung lpddr4, SK Hynix lpddr4 version 1
Exploitation Mechanism
Attackers exploit novel Rowhammer access patterns to trigger bit flips on affected memory modules, compromising system security.
Mitigation and Prevention
Immediate Steps to Take
- Implement ECC DRAM to increase resistance against Rowhammer attacks
Long-Term Security Practices
- Regularly update system firmware and software
- Implement hardware-level security mechanisms
Patching and Updates
Regularly update system firmware and apply patches provided by manufacturers.